Semiconductor device structure, method for manufacturing the same and pixel structure using the same

A method for manufacturing a semiconductor device structure, comprising:

• providing a substrate;
• forming a first dielectric layer on the substrate;
• forming a second dielectric layer on the first dielectric layer, wherein a Young's modulus of the second dielectric layer is smaller than a Young's modulus of the first dielectric layer;
• forming a semiconductor layer on the first dielectric layer or the second dielectric layer;
• forming a first conductive layer, wherein the first conductive layer is adjacent to the first dielectric layer or the second dielectric layer;
• and
• forming a second conductive layer on the second dielectric layer or the first dielectric layer.

A semiconductor device structure, comprising:

• a substrate;
• a first dielectric layer, disposed on the substrate, comprising a first patterned dielectric film and a second patterned dielectric film;
• a second dielectric layer, disposed on the first dielectric layer, wherein a Young's modulus of the second dielectric layer is smaller than a Young's modulus of the first dielectric layer;
• a first semiconductor layer, disposed on the substrate;
• a first conductive layer, disposed on the first patterned dielectric film;
• a second semiconductor layer, disposed on the second patterned dielectric film, wherein the first semiconductor layer and the first conductive layer are disposed at two opposite sides of the first patterned dielectric film, and the first conductive layer and the second semiconductor layer are disposed at two opposite sides of the second patterned dielectric film;
• and
• a second conductive layer, disposed on the second dielectric layer, being electrically connected to the first semiconductor layer, the second semiconductor layer or the first conductive layer via a contact hole.

A pixel structure, comprising:

• at least two pixel electrodes;
• and
• a driving transistor, wherein the pixel electrodes are connected to an end electrode of the driving transistor;
• the driving transistor comprising:
• a substrate;
• a first dielectric layer, disposed on the substrate, comprising a first patterned dielectric film and a second patterned dielectric film;
• a second dielectric layer, disposed on the first dielectric layer, wherein a Young's modulus of the second dielectric layer is smaller than a Young's modulus of the first patterned dielectric film or the second patterned dielectric film;
• a semiconductor layer, disposed adjacently to the first dielectric layer or the second dielectric layer;
• a first conductive layer, disposed adjacently to the first dielectric layer or the second dielectric layer, wherein the semiconductor layer and the first conductive layer are disposed at two opposite sides of the first patterned dielectric film;
• and
• a second conductive layer, disposed on the second dielectric layer, electrically connected to the semiconductor layer or the first conductive layer via a contact hole;
• wherein, the driving transistor drives the pixel electrodes to generate a pixel.

A pixel structure, comprising:

• at least two pixel electrodes;
• and
• a driving transistor, wherein the pixel electrodes are connected to an end electrode of the driving transistor;
• the driving transistor comprising:
• a substrate;
• a semiconductor layer, disposed on the substrate;
• a dielectric layer, disposed on the semiconductor layer;
• a first conductive layer, wherein the first conductive layer and the semiconductor layer are disposed at two opposite sides of the dielectric layer;
• and
• a second conductive layer, disposed on the dielectric layer, electrically connected to the semiconductor layer or the first conductive layer via a contact hole;
• wherein, the driving transistor drives the pixel electrodes to generate a pixel.