Semiconductor device

A semiconductor device comprising:

• an insulative substrate;
• an oxide semiconductor layer located above the insulative substrate and including a channel region, and a source region and a drain region which are located on both sides of the channel region;
• a first terminal electrode located above the insulative substrate and formed of the same material as the oxide semiconductor layer;
• a first insulation film covering the channel region and exposing the source region and the drain region;
• a first conductive layer including a gate electrode located on the first insulation film;
• a second insulation film covering the first conductive layer, the first terminal electrode, the source region and the drain region;
• a second conductive layer including a source electrode which is put in contact with the source region, a drain electrode which is put in contact with the drain region, and a second terminal electrode which is opposed to the first terminal electrode via the second insulation film;
• and
• a third insulation film interposed between the second insulation film, and the source electrode and the drain electrode.