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US 2014/0231781 A1Published application
Photoelectric conversion element and imaging device
AssigneeFUJIFILM Corporation
InventorShinji IMAI
Life of this patent
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Abstract
A photoelectric conversion element is formed by laminating, in order, a substrate, a lower electrode, an organic layer which generates electric charge by light irradiation, an upper electrode which transmits light, a buffer layer and a protective film. The buffer layer is formed from hydrogenated silicon oxide containing hydrogen ions, and has a thickness of 1 to 100 nm. The protective film contains hydrogenated silicon nitride containing hydrogen ions or hydrogenated silicon oxynitride containing hydrogen ions and has a thickness of 30 to 500 nm.
Claims11
A photoelectric conversion element comprising:
- a substrate;
- a lower electrode formed on the substrate;
- an organic layer formed on the lower electrode and adapted to generate electric charges in response to irradiation with light;
- an upper electrode formed on the organic layer and adapted to transmit the light;
- a buffer layer formed on the upper electrode;
- and
- a protective film formed on the buffer layer,
- wherein the buffer layer is composed of hydrogenated silicon oxide containing hydrogen ions and has a thickness of 1 nm to 100 nm;
- and
- wherein the protective film is composed of hydrogenated silicon nitride containing hydrogen ions or hydrogenated silicon oxynitride containing hydrogen ions and has a thickness of 30 nm to 500 nm.
7 more elements
Dependencies are inferred from the claim text.