Resistance memory device
AssigneeWinbond Electronics Corp.
InventorsWen-Yueh Jang, Ming-Chung Chiang
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Abstract
Provided is a resistance memory device including a dielectric layer, a conductive layer, a bottom electrode, a top electrode and a variable resistance layer. The dielectric layer is disposed on a substrate and has a first opening constituted by a lower opening and an upper opening. The conductive layer fills up the lower opening. The bottom electrode is disposed on the bottom and on at least a portion of the sidewall of the upper opening. The top electrode is disposed in the upper opening. The variable resistance layer is disposed between the top electrode and the bottom electrode.
Claims16
A resistance memory device, comprising:
- a dielectric layer, disposed on a substrate and has a first opening constituted by a lower opening and an upper opening;
- a conductive layer, filling up the lower opening;
- a bottom electrode, disposed on a bottom and on at least a portion of a sidewall of the upper opening;
- a top electrode, disposed in the upper opening;
- and
- a variable resistance layer, disposed between the bottom electrode and the top electrode.
Dependencies are inferred from the claim text.