Elongated via structures

A method of forming an integrated circuit structure comprising:

• forming a plurality of via openings by forming, for each of said via openings, a first opening portion in an insulator layer, said first opening portion extending fully through said insulator layer, each of said via openings being formed to have three unequal perpendicular dimensions comprising a depth dimension equal to a thickness of said insulator layer, a width dimension greater than said depth dimension, and a length dimension greater than said width dimension;
• forming, for each of said via openings, a second opening portion to extend partially through said insulator layer, said length dimension of said second opening portion being formed greater than said length dimension of said first opening, and said width dimension of said second opening portion being formed greater than said width dimension of said first opening;
• forming conductive via material within said via openings;
• and
• forming a laminated structure of insulator layers on said insulator layer, said forming of said laminated structure comprising:
• successively forming said insulator layers on one another;
• repeating said forming of said first opening portion and said forming of said second opening portion to successively form via openings in each said insulator layers;
• positioning corresponding ones of via openings of adjacent ones of said insulator layers to partially overlap each other;
• and
• repeating said forming of said conductive via material in said via openings,
• said laminated structure being formed to have a top surface and a bottom surface opposite said top surface,
• said insulator layers being formed between said top surface and said bottom surface of said laminated structure,
• said repeating of said forming of said conductive via material in said via openings electrically connecting said conductive via material within said corresponding ones of said via openings to form continuous electrical via paths through said insulator layers between said top surface and said bottom surface of said laminated structure,
• said positioning of said corresponding ones of via openings within each of said continuous electrical via paths causing said forming of said conductive via material to form a diagonal structural path of said conductive via material through said laminated structure, and
• said diagonal structural path being formed non-perpendicular to said top surface and said bottom surface.

A method of forming an integrated circuit structure comprising:

• forming via openings in an insulator layer;
• forming conductive via material within said via openings;
• and
• forming a laminated structure of insulator layers on said insulator layer, said forming of said laminated structure comprising:
• successively forming said insulator layers on one another;
• repeating said forming of said via openings in each said insulator layers;
• positioning corresponding ones of via openings of adjacent ones of said insulator layers to partially overlap each other;
• and
• repeating said forming of said conductive via material in said via openings,
• said laminated structure being formed to have a top surface and a bottom surface opposite said top surface,
• said insulator layers being formed between said top surface and said bottom surface of said laminated structure,
• said repeating of said forming of said conductive via material in said via openings electrically connecting said conductive via material within said corresponding ones of said via openings to form continuous electrical via paths through said insulator layers between said top surface and said bottom surface of said laminated structure,
• said positioning of said corresponding ones of via openings within each of said continuous electrical via paths causing said forming of said conductive via material to form a diagonal structural path of said conductive via material through said laminated structure.