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US 2014/0227856 A1Published application
Methods of fabricating semiconductor device having shallow trench isolation (sti)
AssigneeSamsung Electronics Co., Ltd.
InventorsTai-Su PARK, Mi-Young SEO, Sung-Wook PARK
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Abstract
Methods of fabricating a semiconductor device include forming a field trench in a silicon substrate, forming a first oxide layer in the field trench, forming a first thinned oxide layer by partially removing a surface of the first oxide layer, and forming a first nitride layer on the first thinned oxide layer.
Claims20
A method of fabricating a semiconductor device, comprising:
- forming a field trench in a silicon substrate;
- forming a first oxide layer in the field trench;
- forming a first thinned oxide layer by partially removing a surface of the first oxide layer;
- and
- forming a first nitride layer on the first thinned oxide layer.
2 more elements
A method of fabricating a semiconductor device, comprising:
- providing a substrate having a cell region, an NMOS region, and a PMOS region;
- forming a cell field trench, an NMOS field trench, and a PMOS field trench in regions of the substrate corresponding to the cell region, the NMOS region, and the PMOS region, respectively;
- forming a first oxide layer in the cell field trench, the NMOS field trench, and the PMOS field trench;
- forming a mask pattern exposing the cell field trench and the NMOS field trench, the mask pattern covering the PMOS field trench;
- forming a first thinned oxide layer by partially removing a surface of the first oxide layer exposed in the cell field trench and the NMOS field trench;
- removing the mask pattern;
- and
- forming a first nitride layer on the first thinned oxide layer disposed in the cell field trench and the NMOS field trench, the first nitride layer being on the first oxide layer disposed in the PMOS field trench.
5 more elements
A method of fabricating a semiconductor device, comprising:
- forming an insulative pattern structure filling a field trench in a silicon substrate, the forming an insulative pattern structure including,
- reducing a first insulating layer at least partially filling the field trench to form a first insulating pattern, and
- forming at least one nitride layer over the first insulating pattern and in the field trench.
Dependencies are inferred from the claim text.