Method for Treating a Semiconductor
AssigneeFirst Solar, Inc.
InventorDonald Franklin Foust
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Abstract
Methods for treating a semiconductor material, and for making devices containing a semiconducting material, are presented. One embodiment is a method for treating a semiconductor material that includes a chalcogenide. The method comprises contacting at least a portion of the semiconductor material with a chemical agent. The chemical agent comprises a solvent, and an iodophor dissolved in the solvent.
Claims21
1-29. (canceled)
A method for treating a semiconductor material, comprising:
- reacting a semiconductor material with an iodine containing chemical agent.
A method for making a photovoltaic device, comprising:
- disposing a chalcogen containing semiconductor material on a support;
- and
- reacting the semiconductor material with an iodine containing chemical agent.
The method of claim 37, wherein the semiconductor material is an absorber material.
A method for making a photovoltaic device, comprising
- disposing a chalcogen containing semiconductor material on a support;
- contacting at least a portion of the semiconductor material with a passivating agent;
- introducing a first dopant to the semiconductor material and forming a first region in the semiconductor material;
- reacting the semiconductor material with an iodine containing chemical agent to form a chalcogen rich region;
- introducing a second dopant to the semiconductor material and forming a chalcogenide species of the second dopant.
The method claim of 41, wherein the heat treatment is performed at a temperature within a range from about 300° C. to about 500° C.
Dependencies are inferred from the claim text.