Pattern forming process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsJun Hatakeyama, Kazuhiro Katayama
Life of this patent
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Abstract
A pattern is formed by coating a first resist composition comprising a resin comprising recurring units having an acid labile group so that it may turn insoluble in organic solvent upon elimination of the acid labile group, a photoacid generator, and a first organic solvent, onto a processable substrate, prebaking, exposing, PEB, and developing in an organic solvent developer to form a first negative pattern; heating the negative pattern to render it resistant to a second organic solvent used in a second resist composition; coating the second resist composition, prebaking, exposing, PEB, and developing in an organic solvent developer to form a second negative pattern. The first and second negative patterns are simultaneously formed.
Claims10
A pattern forming process comprising the steps of:
- coating a first chemically amplified resist composition onto a processable substrate, said first resist composition comprising a resin comprising recurring units having an acid labile group which is eliminatable with acid so that it may turn insoluble in an organic solvent developer as a result of the acid labile group being eliminated, a photoacid generator capable of generating an acid upon exposure to high-energy radiation, and a first organic solvent, prebaking the coating to remove the unnecessary solvent and to form a resist film, exposing patternwise the resist film to high-energy radiation, post-exposure baking, and developing in the organic solvent developer to form a first negative pattern,
- heating the first negative pattern to render it resistant to a second organic solvent used in a second resist composition to be subsequently coated,
- coating the second resist composition comprising a resin and the second organic solvent onto the negative pattern-bearing substrate, prebaking, exposing, post-exposure baking, and developing in an organic solvent developer to form a second negative pattern,
- whereby the negative pattern of the first resist composition and the negative pattern of the second resist composition are simultaneously formed.
Dependencies are inferred from the claim text.