Film forming method and film forming apparatus
AssigneeTokyo Electron Limited
InventorsHiroki MURAKAMI, Koji SASAKI, Keisuke SUZUKI, Yuichiro MOROZUMI
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Abstract
A film forming method for forming a thin film composed of a SiOCN layer containing at least silicon (Si), oxygen (O), carbon (C) and nitrogen (N) on a surface of a workpiece within an evacuable processing vessel optionally using a silane-based gas, a hydrocarbon gas, a nitriding gas or an oxidizing gas includes forming a first film including at least Si, C and N, and forming a second film including at least Si, C and O. The forming a first film and the forming a second film are set as a cycle and the cycle is performed once or more.
Claims24
A film forming method for forming a thin film composed of a SiOCN layer containing at least silicon (Si), oxygen (O), carbon (C) and nitrogen (N) on a surface of a workpiece within an evacuable processing vessel optionally using a silane-based gas, a hydrocarbon gas, a nitriding gas or an oxidizing gas, the method comprising:
- forming a first film including at least Si, C and N;
- and
- forming a second film including at least Si, C and O,
- wherein a cycle including the forming a first film and the forming a second film is performed one or more times.
Dependencies are inferred from the claim text.