Method of making a die with recessed aluminum die pads

A method for making a semiconductor device comprising:

• forming an interconnect layer including a first electrical interconnect;
• forming a first dielectric layer over the interconnect layer;
• forming an opening in the first dielectric layer and over the first electrical interconnect of the interconnect layer;
• forming an aluminum layer in the opening and over the first dielectric layer;
• etching the aluminum layer to form an aluminum die pad over the first electrical interconnect, the aluminum die pad electrically coupled to the first electrical interconnect;
• forming a second dielectric layer over the aluminum die pad and the first dielectric layer;
• and
• planarizing the second dielectric layer to form a planar surface.

A method for making a semiconductor device comprising:

• forming an electrical interconnect layer;
• forming a first dielectric layer over the electrical interconnect layer;
• forming an opening in the first dielectric layer over a first electrical interconnect of the electrical interconnect layer;
• forming an aluminum layer in the opening and over the first dielectric layer;
• etching the aluminum layer to form an aluminum die pad, the aluminum die pad electrically coupled to the first electrical interconnect;
• forming a second dielectric layer over the aluminum die pad and the first dielectric layer;
• and
• forming a conductive via through the first dielectric layer and the second dielectric layer to contact a second electrical interconnect of the electrical interconnect layer.