Fabrication of ultra-shallow junctions
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLi-Ting WANG, Chun-Feng NIEH, Chong-Wai LO
Life of this patent
Estimating the term…
Abstract
A method of forming an ultra-shallow junction in a semiconductor substrate. The method includes forming an amorphous region in a semiconductor substrate by performing a pre-amorphization implant step and implanting one or more dopants in the amorphous region by performing a monolayer doping step. The semiconductor substrate is then thermally treated to activate the implanted dopant in the amorphous region to thereby form an ultra-shallow junction in the semiconductor substrate. The thermal treatment can be performed without any oxide cap overlying the implanted amorphous region.
Claims21
1-5. (canceled)
A method of forming an ultra-shallow junction in a semiconductor substrate comprising the steps of:
- forming an amorphous region in a semiconductor substrate by performing a pre-amorphization implant step;
- implanting nitrogen in the amorphous region by performing a first monolayer doping step;
- implanting phosphorous in the amorphous region by performing a second monolayer doping step after the first monolayer doping step;
- and
- thermally treating the semiconductor substrate to activate the implanted nitrogen and phosphorous in the amorphous region to thereby form an ultra-shallow junction in the semiconductor substrate.
(canceled)
(canceled)
A method of providing an ultra-shallow junction having activated dopants in a semiconductor substrate comprising the steps of:
- forming an amorphous region in a semiconductor substrate;
- implanting nitrogen in the amorphous region by performing a first monolayer doping step;
- and
- implanting phosphorous in the amorphous region by performing a second monolayer doping step after the first monolayer doping step;
- activating the nitrogen, wherein the activating comprises recrystallizing the amorphous region,
- wherein the step of activating the nitrogen is performed without any oxide cap overlying the implanted amorphous region.
(canceled)
(canceled)
(canceled)
(canceled)
Dependencies are inferred from the claim text.