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US 2014/0213046 A1Published application
Fabrication of III-Nitride Layers
AssigneeInternational Rectifier Corporation
InventorMichael A. Briere
Life of this patent
Estimating the term…
Abstract
A method that includes implantation of dopants while a III-nitride body is being grown on a substrate, and an apparatus for the practice of the method.
Claims3
1-29. (canceled)
An apparatus comprising:
- a reactor chamber to receive a substrate and a reactant gas to grow a III-nitride semiconductor body on said substrate;
- an implanter chamber to implant ions into said III-nitride semiconductor body to dope said III-nitride semiconductor body during growth of said III-nitride semiconductor body such that said III-nitride semiconductor body is grown having at least one of N type conductivity and P type conductivity, said implanter chamber being separate from said reactor chamber.
A method comprising:
- placing a substrate in a reactor chamber;
- pumping reactant gas into said reactor chamber for growing a III-nitride semiconductor body on said substrate;
- implanting ions into said III-nitride semiconductor body to dope said III-nitride semiconductor body during growth of said III-nitride semiconductor body such that said III-nitride semiconductor body is grown having at least one of N type conductivity and P type conductivity.
Dependencies are inferred from the claim text.