Process For Forming Resistive Switching Memory Cells Using Nano-Particles

A method for fabricating a resistance-switching memory device, comprising:

• providing recesses in memory cell regions of a layered semiconductor material;
• performing at least one coating step with nano-particles, the nano-particles self-assemble in the recesses, a bottom surface of at least one nano-particle contacting a top surface of a bottom electrode of each memory cell region;
• depositing an insulation layer;
• reducing the insulation layer, thereby providing at least one nano-particle with an exposed top surface for each memory cell region;
• and
• providing a top electrode for each memory cell region, a bottom surface of the top electrode contacting the top surface of the at least one nano-particle with the exposed top surface for each memory cell region, thereby forming a resistance-switching memory cell from each memory cell region in which the nano-particles are resistance-switching particles.

A method for fabricating a resistance-switching memory device, comprising:

• providing raised structures, separated from one another by voids, on a substrate, each raised structure comprising a mask above a bottom electrode;
• filling the voids with insulation, lower portions of the insulation extending between the raised structures up to a top surface of the mask of each raised structure, and upper portions of the insulation extending above the top surface of the mask of each raised structure and above top surfaces of the lower portions of the insulation;
• performing a planarizing step, the planarizing step removes the upper portions of the insulation, thereby exposing the top surface of the mask of each raised structure and the top surfaces of the lower portions of the insulation;
• removing the mask of each raised structure, exposing a top surface of the bottom electrode of each raised structure, and exposing sidewalls of the lower portions of the insulation, thereby forming a recess for each raised structure;
• performing at least one coating step with nano-particles, the nano-particles self-assemble in the recesses;
• and
• providing a top electrode for each raised structure thereby forming a metal-insulator-metal memory cell from each raised structure in which the top and bottom electrodes are metal layers and the nano-particles are resistance-switching particles in an insulation layer.