Pre-gate, source/drain strain layer formation

A method of producing a transistor, said method comprising:

• forming a base layer on a substrate;
• forming a strain-producing layer on said base layer;
• removing at least one portion of said strain-producing layer to create at least one opening in said strain-producing layer and leave first and second portions of said strain-producing layer on said base layer, said first and second portions of said strain-producing layer comprising source and drain stressor regions of said transistor;
• growing a channel region in said opening of said strain-producing layer from said base layer;
• forming a gate insulator on said channel region;
• forming a gate conductor on said gate insulator after forming said source and drain stressor regions, said channel region, and said gate insulator;
• and
• after forming said gate conductor, forming sidewall spacers adjacent sidewalls of said gate conductor wherein said sidewall spacers being on top of and vertically overlapping said source and drain stressor regions.

A method of producing a transistor, said method comprising:

• forming a base layer on a substrate;
• forming a strain-producing layer on said base layer to have a relative top opposite said base layer;
• removing at least one portion of said strain-producing layer to create at least one opening in said strain-producing layer and leave first and second portions of said strain-producing layer on said base layer, said first and second portions of said strain-producing layer comprising source and drain stressor regions of said transistor;
• epitaxially growing a channel region from said base layer in said opening of said strain-producing layer to a top of said strain-producing layer;
• forming a gate insulator on said channel region;
• and
• forming a gate conductor on said gate insulator after forming said source and drain stressor regions, said channel region, and said gate insulator.