Epitaxial process
AssigneeUnited Microelectronics Corp.
InventorsChia-Jui Liang, Po-Chao Tsao
Life of this patent
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Abstract
An epitaxial process includes the following steps. A substrate including a first area and a second area is provided. A first gate and a second gate are formed respectively on the substrate of the first area and the second area. A first spacer and a second spacer are respectively formed on the substrate beside the first gate and the second gate at the same time. A first epitaxial structure is formed beside the first spacer and then a second epitaxial structure is formed beside the second spacer by the first spacer and the second spacer respectively.
Claims20
An epitaxial process, comprising:
- providing a substrate comprising a first area and a second area;
- forming a first gate and a second gate respectively on the substrate of the first area and the second area;
- forming a first spacer and a second spacer respectively on the substrate beside the first gate and the second gate at the same time;
- and
- forming a first epitaxial structure beside the first spacer and then forming a second epitaxial structure beside the second spacer, wherein the first spacer and the second spacer define the locations of the first epitaxial structure and the second epitaxial structure respectively.
An epitaxial process, comprising:
- depositing a first hard mask on a second area of a substrate but exposing a first area of the substrate completely;
- forming a first epitaxial structure in the exposed first area;
- depositing a second hard mask on the substrate of the first area and on the first hard mask of the second area;
- removing the second hard mask and the first hard mask in the second area;
- forming a second epitaxial structure in the second area;
- and
- removing the second hard mask of the first area.
Dependencies are inferred from the claim text.