Method of manufacturing cmos image sensor

A method of manufacturing a complementary metal-oxide semiconductor (CMOS) image sensor (CIS), the method comprising:

• preparing a substrate having a first surface and a second surface opposite to the first surface such that the substrate includes:
• an active pixel sensor (APS) array region including a photoelectric transformation element, and
• a peripheral circuit region;
• forming an insulating interlayer on the first surface of the substrate such that the insulating interlayer includes metal wirings electrically connected to the photoelectric transformation element;
• forming a light blocking layer on the peripheral circuit region of the second surface of the substrate such that the light blocking layer exposes the APS array region and includes a plurality of metal wiring patterns spaced apart from one another to form at least one drainage path along a boundary region between the APS array region and the peripheral circuit region;
• forming a color filter layer on the second surface of the substrate to cover the APS array region and the light blocking layer;
• and
• forming a microlens on the color filter layer on the APS array region.