Packaged Semiconductor Devices and Packaging Methods

A method of packaging a semiconductor device, the method comprising:

• forming a plurality of through-vias over a carrier;
• coupling an integrated circuit die to the carrier;
• forming a first redistribution layer (RDL) over a first side of the plurality of through-vias and the integrated circuit die;
• removing the carrier;
• forming a second RDL over a second side of the plurality of through-vias and the integrated circuit die;
• forming a plurality of contact pads over the second RDL;
• and
• forming a recess in an insulating material of the second RDL proximate one of the plurality of contact pads.

A method of packaging a semiconductor device, the method comprising:

• forming an adhesive over a first carrier;
• forming a seed layer over the adhesive;
• forming a sacrificial layer over the seed layer;
• patterning the sacrificial layer;
• forming a plurality of through-vias over the seed layer within the patterned sacrificial layer;
• removing the sacrificial layer;
• coupling an integrated circuit die over the seed layer;
• forming a molding compound over the plurality of through-vias and the integrated circuit die;
• forming a first redistribution layer (RDL) over a first side of the plurality of through-vias, the integrated circuit die, and the molding compound;
• coupling a second carrier over the first RDL;
• removing the first carrier;
• forming a second RDL over a second side of the plurality of through-vias, the integrated circuit die, and the molding compound, the second side being opposite the first side;
• forming a plurality of contact pads over the second RDL;
• and
• forming a recess in an insulating material of the second RDL around a perimeter of each of the plurality of contact pads.

A method of packaging a semiconductor device, the method comprising:

• forming an intermediate structure including a die and a plurality of through-vias encased within a mold compound;
• forming a first redistribution layer (RDL) over a first side of the intermediate structure;
• forming a second RDL over a second side of the intermediate structure, the second RDL including a topmost insulating layer;
• forming a plurality of contact pads over and electrically connected to the second RDL;
• and
• forming a plurality of recesses in the topmost insulating layer of the second RDL proximate one of the plurality of contact pads.