Method of forming micropattern, method of forming damascene metallization, and semiconductor device and semiconductor memory device fabricated using the same

A semiconductor device comprising:

• a semiconductor substrate including a dummy region adjacent to an active line region,
• the active line region including cell trenches,
• the dummy region including dummy trenches;
• a plurality of cell lines in the cell trenches,
• the plurality of cell lines separated by first width;
• and
• a plurality of dummy lines in the dummy trenches,
• the plurality dummy lines separated by a second width that is greater than the first width.

A semiconductor memory device comprising:

• a string selection line (SSL) and a ground selection line (GSL) on a substrate;
• a group of wordlines extending in a first direction between the string selection line (SSL) and the ground selection line (GSL);
• a first bitline set and a second bit line set on the group of wordlines,
• the first bitline set and the second bitline set extending in a second direction,
• the second direction being different from the first direction, and
• the first bitline set and the second bitline set are electrically connected to the SSL;
• a common source line (CSL) that is electrically connected to the GSL;
• and
• a plurality of dummy bitlines between the first and second bitline sets,
• the plurality of dummy bitlines having a level that is equal to a level of the first and second bitline sets, and
• the dummy bitlines separated by a first distance that is greater than a second distance separating at least two bitlines of the first bitline set.