US 2014/0210042 A1Published application

Semiconductor device

AssigneeSeiko Instruments Inc.

InventorHisashi HASEGAWA

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Abstract

Provided is a semiconductor device which prevents deterioration of the long-term reliability caused by entry of moisture owing to a fuse opening in a multilayer wiring process. In order to prevent entry of moisture through the fuse opening, interlayer insulating films which are oxide films are etched so as to leave a part of a plasma TEOS oxide film layer. After that, a passivation nitride film is deposited and patterned, and then, the passivation nitride film is partly removed, thereby obtaining a structure in which side walls and a side bottom surface of the interlayer insulating films in the fuse opening are covered with the passivation nitride film. This enables inhibition of entry of moisture through an interface among the stacked interlayer insulating films and through an SOG layer, and deterioration of the IC characteristics owing to moisture can be prevented.

Claims6

Dependent claims

A semiconductor device, comprising:

a semiconductor substrate;
a field insulating film formed on a surface of the semiconductor substrate;
a resistor and a fuse formed on the field insulating film;
a first interlayer insulating film formed on the fuse;
a second interlayer insulating film formed on the first interlayer insulating film;
a third interlayer insulating film formed on the second interlayer insulating film and including an SOG layer therein;
a passivation oxide film formed on the third interlayer insulating film;
a fuse opening formed above the fuse by removing films from the passivation oxide film to a midpoint in the second interlayer insulating film;
and
a passivation nitride film covering the passivation oxide film and a side surface and a side bottom surface of the fuse opening, wherein:
the passivation nitride film is removed so that the second interlayer insulating film is exposed from the passivation nitride film on a bottom surface of the fuse opening;
and
the passivation nitride film has an opening formed therein in a shape different from a shape of the fuse opening.

10 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/161,894Filed 23 Jan 2014
Priority: JP 2013-01238625 Jan 2013
Published: 31 Jul 2014
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10D 1/47
Resistors: resistors having no potential barriers
H10D 84/811
Characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs: combinations of…
H10D 84/817
Combinations of field-effect devices and one or more diodes, capacitors or resistors: combinations of field-effect devices and resistors only
H10W 20/494
Fuses, i.e. interconnections changeable from conductive to non-conductive: changeable by the use of an external beam, e.g. laser beam or ion beam

Family

US 9,570,537 B2Related patent
US 2014/0210042 A1This patent

From the US filing history. Foreign family members aren’t listed.

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