Solid-state imaging device and method for manufacturing the same
AssigneePanasonic Corporation
InventorsHisashi YANO, Shigeru SUZUKI, Gen OKAZAKI, Akira OODAIRA, Motonari KATSUNO, Tetsuya NAKAMURA
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AssigneePanasonic Corporation
InventorsHisashi YANO, Shigeru SUZUKI, Gen OKAZAKI, Akira OODAIRA, Motonari KATSUNO, Tetsuya NAKAMURA
Estimating the term…
In a pixel unit of a solid-state imaging device, a semiconductor substrate is provided with a plurality of photodiodes, a first insulating film includes a recess in a portion above each of the photodiodes, a second insulating film embeds the recess, a plurality of color filters is formed on the second insulating film, the color filters each corresponding to one of the photodiodes, a partition is provided between adjacent ones of the color filters, the partition being a part of a third insulating film, and in an area outside of the pixel unit, (i) a conductive film at least partially covered by the third insulating film is formed on the second insulating film, and (ii) the third insulating film formed on the conductive film and on the second insulating film near the conductive film has a film thickness smaller than a film thickness of the partition.
A solid-state imaging device including a pixel unit configured to perform photoelectric conversion on incident light, the solid-state imaging device comprising:
A method for manufacturing a solid-state imaging device including a pixel unit, the method comprising:
Dependencies are inferred from the claim text.