Reverse Blocking Semiconductor Device, Semiconductor Device with Local Emitter Efficiency Modification and Method of Manufacturing a Reverse Blocking Semiconductor Device

A semiconductor device comprising:

• a collector electrode;
• a base region of a first conductivity type and a body region of a second complementary conductivity type, the base and body regions forming a pn junction;
• and
• an emitter layer arranged between the base region and the collector electrode and comprising emitter zones of the second conductivity type and a channel of the first conductivity type, the channel extending through the emitter layer between the base region and the collector electrode and forming a Schottky contact with the collector electrode.

A semiconductor device comprising:

• a collector electrode;
• a base region of a first conductivity type and a body region of a second complementary conductivity type, the base and body regions forming a pn junction;
• and
• an emitter layer arranged between the base region and the collector electrode and comprising emitter zones of the second conductivity type and channels of the first conductivity type, the channels extending through the emitter layer between the base region and the collector electrode, wherein
• a channel population density in a first section of the emitter layer is lower than in a second section.

A method of manufacturing a reverse blocking semiconductor device, the method comprising:

• introducing impurities of a first conductivity type into a semiconductor substrate of the first conductivity type through a process surface to obtain a process layer extending into the semiconductor substrate up to a first depth;
• introducing impurities of a second, complementary conductivity type into the semiconductor substrate through openings of an impurity mask provided on the process surface to obtain emitter zones of the second conductivity type extending up to a second depth deeper than the first depth and channels of the first conductivity type between the emitter zone;
• and
• removing exposed portions of the process layer above the emitter zones.