Semiconductor light emitting element and method of manufacturing semiconductor light emitting element

A method of manufacturing a semiconductor light emitting element, the method comprising:

• a first process for laminating an n-type semiconductor layer on a substrate;
• a second process for laminating a light emitting layer on the n-type semiconductor layer by a metal organic chemical vapor deposition device, the light emitting layer having a multiple quantum well structure in which barrier layers and well layers containing GaInN are alternately laminated, and the light emitting layer having a V-shaped concave portion resulting from a threading dislocation generated in the n-type semiconductor layer;
• and
• a third process for laminating a p-type semiconductor layer on the light emitting layer,
• wherein the second process includes, when the barrier layers are formed,
• an operation of supplying a raw material to the metal organic chemical vapor deposition device to grow an n-side low-temperature barrier layer with a substrate temperature at a first growth temperature,
• next, an operation of increasing the substrate temperature to a second growth temperature that is higher than the first growth temperature, while supply of the raw material is continued, to grow a high-temperature barrier layer on the n-side low-temperature barrier layer,
• subsequently, an operation of suspending supply of the raw material and lowering the substrate temperature to a third growth temperature that is lower than the second growth temperature, and while supply of the raw material remains suspended, maintaining the substrate at the third growth temperature for a time, which is at least 0.3 times as long as a time required to grow the n-side low-temperature barrier layer, and thereafter, restarting supply of the raw material to grow a p-side low-temperature barrier layer on the high-temperature barrier layer, and
• further, an operation of growing the well layer on the p-side low-temperature barrier layer.