Thin film transistor and method for fabricating the same

Abstract

Disclosed is a thin film transistor including a light-shielding layer made of the same material as a semiconductor layer on a substrate, and a method for fabricating the same. The thin film transistor includes a substrate, a light-shielding layer and a buffer layer formed on the substrate in this order, a semiconductor layer formed on the buffer layer, the semiconductor layer formed of the same material as the light-shielding layer, a gate insulating film and a gate electrode formed on the semiconductor layer in this order, an interlayer insulating film formed on the substrate such that it covers the gate electrode, the interlayer insulating film comprising a source contact hole and a drain contact hole exposing source and drain areas of the semiconductor layer, respectively, and a source electrode and a drain electrode electrically connected to the semiconductor layer through the source contact hole and the drain contact hole.

Dependencies are inferred from the claim text.