Nanostructure semiconductor light emitting device and manufacturing method thereof

A nanostructure semiconductor light emitting device comprising:

• a base layer including a first conductivity type semiconductor;
• a mask disposed on the base layer and including a plurality of openings such that regions of the base layer are exposed thereto;
• a plurality of nano light emitting structures respectively disposed on the exposed regions of the base layer, and including nanocores that have a first conductivity type semiconductor, and including an active layer and a second conductivity type semiconductor layer sequentially disposed on surfaces of the nanocores;
• and
• a diffusion preventing film located between the nanocore and an inner side wall of the openings.

A method of manufacturing a nanostructure semiconductor light emitting device, the method comprising:

• providing a base layer formed of a first conductivity type semiconductor;
• forming a mask on the base layer;
• forming, in the mask, a plurality of openings so as to expose regions of the base layer thereto;
• forming a diffusion preventing film formed of a material different from a material of the mask on respective inner side walls of the plurality of openings;
• forming a plurality of nanocores by growing the first conductivity type semiconductor on the exposed regions of the base layer to fill the plurality of openings;
• partially removing the mask to expose side portions of the plurality of nanocores;
• sequentially growing an active layer and a second conductivity type semiconductor layer on surfaces of the plurality of nanocores;
• and
• forming a contact electrode layer on a surface of the second conductivity type semiconductor layer.