Chemical-mechanical polishing composition containing zirconia and metal oxidizer
AssigneeCabot Microelectronics Corporation
InventorsLin Fu, Steven Grumbine, Matthias Stender
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Abstract
The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles, wherein the abrasive particles comprise zirconia, (b) at least one metal ion oxidizer, wherein the at least one metal ion oxidizer comprises metal ions of Co3+, Au+, Ag+, Pt2+, Hg2+, Cr3+, Fe3+, Ce4+, or Cu2+, and (c) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 7, and wherein the chemical-mechanical polishing composition does not contain a peroxy-type oxidizer.
Claims41
A chemical-mechanical polishing composition comprising:
- (a) abrasive particles, wherein the abrasive particles comprise zirconia,
- (b) at least one metal ion oxidizer, wherein the at least one metal ion oxidizer comprises metal ions of Co3+, Au+, Ag+, Pt2+, Hg2+, Cr3+, Fe3+, Ce4+, or Cu2+, and
- (c) an aqueous carrier,
- wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 7, and wherein the chemical-mechanical polishing composition does not contain a peroxy-type oxidizer.
A method of polishing a substrate comprising:
- (i) providing a substrate, wherein the substrate comprises an organic polymer film;
- (ii) providing a polishing pad;
- (iii) providing a chemical-mechanical polishing composition comprising:
- (a) abrasive particles, wherein the abrasive particles comprise zirconia,
- (b) at least one metal ion oxidizer, wherein the at least one metal ion oxidizer comprises metal ions of Co3+, Au+, Ag+, Pt2+, Hg2+, Cr3+, Fe3+, Ce4+, or Cu2+, and
- (c) an aqueous carrier,
- wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 7, and wherein the chemical-mechanical polishing composition does not contain a peroxy-type oxidizer;
- (iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition;
- and
- (v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the organic polymer film on a surface of the substrate to polish the substrate.
A method of polishing a substrate comprising:
- (i) providing a substrate, wherein the substrate comprises a phase change alloy (PCA);
- (ii) providing a polishing pad;
- (iii) providing a chemical-mechanical polishing composition comprising:
- (a) abrasive particles, wherein the abrasive particles comprise zirconia,
- (b) at least one metal ion oxidizer, wherein the at least one metal ion oxidizer comprises metal ions of Co3+, Au+, Ag+, Pt2+, Hg2+, Cr3+, Fe3+, Ce4+, or Cu2+, and
- (c) an aqueous carrier,
- wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 7, and wherein the chemical-mechanical polishing composition does not contain a peroxy-type oxidizer;
- (iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition;
- and
- (v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the PCA on the surface of a substrate to polish the substrate.
Dependencies are inferred from the claim text.