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US 2014/0208830 A1Published application
Cmos gas sensor and method for manufacturing the same
AssigneeSensirion AG
InventorsJohannes BUHLER, Cyrill KUEMIN
Life of this patent
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Abstract
A CMOS gas sensor comprises a membrane (13) extending over an opening (12) of a silicon substrate (1). A patch (2) of sensing material is arranged on the membrane (13) and in contact with electrodes (3) of platinum. A heater (5) of tungsten is located in or on the membrane (13) at the location of the patch (2) of metal-oxide sensing material. Combining platinum electrodes (3) with a tungsten heater (5) on top of a CMOS structure provides a gas sensor of high reliability and stability.
Claims14
A gas sensor comprising
- a silicon substrate,
- CMOS circuitry integrated on said silicon substrate,
- an opening extending through said substrate,
- a membrane extending over said opening,
- a patch of sensing material arranged on said membrane,
- electrodes arranged on said membrane in electrical contact with said patch of sensing material,
- a tungsten heater arranged in or on said membrane at a location of said patch,
- characterized in that said electrodes are of platinum.
5 more elements
Dependencies are inferred from the claim text.