Charge pump and method of biasing deep n-well in charge pump

A method of biasing a deep N-well of at least one NMOS device coupled to at least one capacitor in a charge pump circuit comprising:

• grounding the deep N-well for a negative pump operation by turning on a switch coupled between the deep N-well and a ground, wherein a drain of the switch is coupled to a deep N-well of the switch;
• storing electrical charges in the at least one capacitor;
• supplying a signal to a gate of the at least one NMOS device different from a signal to a drain of the at least one NMOS device;
• and
• supplying the electrical charges to an output of the charge pump circuit.

A charge pump having at least one charge pump stage, each charge pump stage comprising:

• at least one NMOS device having a deep N-well (DNW), wherein a gate of the at least one NMOS device is capable of receiving a different signal from a drain of the at least one NMOS device;
• at least one capacitor coupled to the at least one NMOS device;
• a switch coupled between the at least one NMOS device and a ground, wherein a drain of the switch is coupled to a deep N-well of the switch;
• a first node coupled to the at least one NMOS device;
• and
• a second node coupled to the at least one NMOS device,
• wherein the first node is arranged to receive an input signal, the at least one capacitor is arranged to store electrical charges, the charge pump stage is configured to supply the electrical charges to the second node, and the DNW is arranged to float for a positive pump operation.