Copper etching integration scheme
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Wei Lu, Chung-Ju Lee, Hsiang-Huan Lee, Tien-I Bao
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Abstract
The present disclosure is directed to an interconnect structure. The metal interconnect structure has a metal body disposed over a semiconductor substrate and a projection extending from the metal body. A barrier layer continuously extends over the projection from a first sidewall of metal body to an opposing second sidewall of the metal body. A layer of dielectric material is disposed over the semiconductor substrate at a position abutting the metal body and the projection.
Claims20
An interconnect structure, comprising:
- a metal body disposed over a semiconductor substrate;
- a projection extending outward from a top surface of the metal body;
- a barrier layer continuously extending over the projection from a first sidewall of the metal body to an opposing, second sidewall of the metal body;
- and
- a layer of dielectric material disposed over the semiconductor substrate at a position abutting the metal body and the projection.
A metal interconnect structure, comprising:
- a metal wire overlying a semiconductor substrate;
- a metal via disposed onto and in direct contact with a top surface of the metal wire, wherein the metal via includes angled opposing sidewalls which taper to give the metal via a bottom surface that is wider than a top surface;
- and
- a layer of dielectric material surrounding the metal wire and the metal via.
An integrated circuit, comprising:
- a metal body disposed over a semiconductor substrate;
- a projection disposed onto and in direct contact with a top surface of the metal body;
- a dielectric material surrounding the metal body and the projection;
- and
- a barrier layer disposed between the dielectric material and the metal body and the projection, wherein the barrier layer does not abut a bottom surface of the metal body.
Dependencies are inferred from the claim text.