Semiconductor device with chip having low-k-layers

A semiconductor device comprising:

• at least one semiconductor chip, the chip comprising:
• an active area on a top side of the at least one semiconductor chip, the active area being formed at least in part of a low-k material defining a low-k sub-area of the active area;
• an embedding material embedding the at least one semiconductor chip, wherein at least part of the embedding material forms a coplanar area with the active area;
• at least one contact area disposed within the low-k sub-area;
• a redistribution layer disposed on the coplanar area, wherein the redistribution layer is electrically connected to the at least one contact area;
• at least one interconnect, located outside the low-k subarea, the interconnect electrically connected to the at least one contact area via the redistribution layer.

A method of producing a semiconductor device, comprising:

• embedding a semiconductor chip, including a top side with an active area formed at least part of low-k material defining a low-k sub-area, into an embedding material;
• forming a planar surface on the embedding material, the active area coplanar with the embedding material;
• disposing at least one contact area within the low-k sub-area;
• disposing a redistribution layer on the coplanar area, the redistribution layer electrically connected to the at least one contact area;
• forming at least one interconnect outside the low-k sub-area, the at least one interconnect electrically connected to the at least one contact area within the low-k sub-area via the redistribution layer.