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US 2014/0197520 A1Published application
Resistor and resistor fabrication for semiconductor devices
AssigneeQUALCOMM Incorporated
InventorsJihong Choi, John J. Zhu, Bin Yang, Giridhar Nallapati, PR Chidambaram
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Abstract
In a particular embodiment, a method includes removing a first portion of an optical planarization layer using a lithographic mask to expose a region of the optical planarization layer. A resistive layer is formed at least partially within the region. The method further includes removing at least a second portion of the optical planarization layer and at least a third portion of the resistive layer to form a resistor.
Claims24
A method comprising:
- removing a first portion of an optical planarization layer using a lithographic mask to expose a region of the optical planarization layer;
- forming a resistive layer at least partially within the region;
- and
- removing at least a second portion of the optical planarization layer and at least a third portion of the resistive layer to form a resistor.
1 more element
A method comprising:
- a first step for removing a first portion of an optical planarization layer using a lithographic mask to expose a region;
- a second step for forming a resistive layer at least partially within the region;
- and
- a third step for removing at least a second portion of the optical planarization layer and at least a third portion of the resistive layer to form a resistor.
1 more element
Dependencies are inferred from the claim text.