Stacked structure semiconductor device

A method, comprising:

• manufacturing a capacitor over a semiconductor substrate of a first conductivity type, said capacitor being manufactured by:
• forming a heavily-doped layer of a second conductivity type over said semiconductor substrate of a first conductivity type,
• forming a first insulating layer over the heavily-doped layer of the second conductivity type, and
• forming a first metal layer over the first insulating layer;
• depositing a second insulting layer over the capacitor;
• and
• forming at least one resistor by:
• depositing a second metal layer over said insulating layer,
• selectively removing the second metal layer for forming at least two regions of the second metal layer which are separated by a region without metal material, and
• depositing a resistive material layer for forming at least one region of resistive material over said second insulating layer an between said two regions of the second metal layer.