Semiconductor device and method of manufacturing the same
AssigneeToyota Jidosha Kabushiki Kaisha
InventorYoshihito Mizuno
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Abstract
A semiconductor device that is equipped with a semiconductor substrate, a composite metal film, and a detection terminal is provided. The composite metal film is formed on a surface or a back face of the semiconductor substrate, and has a first metal film, and a second metal film that is joined to the first metal film and is different in Seebeck coefficient from the first metal film. The detection terminal can detect a potential difference between the first metal film and the second metal film.
Claims13
A semiconductor device comprising:
- a semiconductor substrate;
- a main electrode that has a first metal film that is formed on a surface of an element formation field of the semiconductor substrate, and a second metal film that is joined to a face of the first metal film that is located on an other side of the semiconductor substrate and is different in Seebeck coefficient from the first metal film;
- and
- a detection terminal that can detect a potential difference between the first metal film and the second metal film.
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A method of manufacturing a semiconductor device that is equipped with:
- a semiconductor substrate;
- a main electrode that has a first metal film that is formed on a surface of an element formation field of the semiconductor substrate, and a second metal film that is joined to a face of the first metal film that is located on an other side of the semiconductor substrate and is different in Seebeck coefficient from the first metal film;
- and
- a detection terminal that can detect a potential difference between the first metal film and the second metal film, the method comprising:
- depositing the first metal film and the second metal film continuously in a vacuum through sputtering.
Dependencies are inferred from the claim text.