Trench silicide and gate open with local interconnect with replacement gate process

A computer readable storage medium storing a plurality of instructions which, when executed, generate a semiconductor device that comprises:

• a plurality of replacement metal gates on a semiconductor substrate, wherein first gates have sources and drains and at least one second gate is isolated from the first gates;
• gate spacers of a first insulating material around each first gate;
• a first insulating layer of a second insulating material between the gate spacers, wherein at least some of the second insulating material overlies sources and drains of the first gates;
• one or more insulating mandrels aligned over the gates, wherein the insulating mandrels comprise the first insulating material;
• mandrel spacers around each insulating mandrel, wherein the mandrel spacers comprise the first insulating material;
• one or more first contacts to the sources and drains of the first gates through the first insulating layer between the mandrel spacers;
• a second contact to the at least one second gate through the first insulating material above the second gate;
• a third insulating layer over the transistor;
• and
• one or more local interconnects that contact the first contacts and the second contact through the third insulating layer.