Semiconductor device and manufacturing method thereof

A manufacturing method of a semiconductor device, comprising:

• preparing design data for manufacturing a semiconductor device which comprises a first contact region having a first size;
• preparing a photo mask based on the design data, wherein N (N being an integer of 2 or more) first contact regions are replaced with one second contact region having a second size greater than the first size;
• and
• forming a semiconductor device having the first contact region and the second contact region formed on at least one of a common source diffusion layer and a common drain diffusion layer using the photo mask.

A manufacturing method of a semiconductor device, comprising:

• preparing design data for manufacturing a semiconductor device which comprises a first contact having a first size;
• preparing a photo mask based on the design data, wherein N (N being an integer of 2 or more) first contact regions are replaced with a single second contact region having a second size larger than the first size, and having a resistance from 0.9 times to 1.1 times a resistance of the N first contact regions which are connected to each other in parallel;
• and
• forming the semiconductor device having the second contact region on at least one of a source diffusion layer and a drain diffusion layer using the photo mask.