Back to results
US 2014/0197483 A1Published application
Trench shielding structure for semiconductor device and method
AssigneeSemiconductor Components Industries, LLC
InventorsPeter A. Burke, Gordon M. Grivna, Prasad Venkatraman
Life of this patent
Estimating the term…
Abstract
A shielding structure for a semiconductor device includes a plurality of trenches. The trenches include passivation liners and shield electrodes, which are formed therein. In one embodiment, the shielding structure is placed beneath a control pad. In another embodiment, the shielding structure is placed beneath a control runner.
Claims25
1-21. (canceled)
A semiconductor device structure comprising:
- a region of semiconductor material having a major surface, an active region and a contact region;
- a first trench structure formed in the region of semiconductor material and extending from the active region to the contact region, wherein the first trench structure includes a control electrode layer and a shield electrode layer, and wherein an upper surface of the shield electrode layer in the contact region is recessed within the first trench without overlapping the major surface of the region of semiconductor material in the contact region;
- a first conductive layer coupled to the control electrode layer;
- and
- a second conductive layer coupled to the shield electrode layer within the first trench structure.
2 more elements
A semiconductor device structure comprising:
- a region of semiconductor material having a major surface, an active area, and a contact area;
- a trench having a striped shape formed in the region of semiconductor material and extending from the active area to the contact area;
- a source region adjacent the trench in the active area;
- a shield electrode formed in the trench and separated from the region of semiconductor material by a first insulator layer;
- a control electrode formed in the trench and separated from the region of semiconductor material by a second insulator layer and separated from the shield electrode by a third insulator layer, wherein shield electrode and the control electrode terminate in the contact area, and wherein the shield electrode is recessed below the major surface of the region of semiconductor material in the contact area without overlapping the major surface in the contact area;
- a first conductive structure contacting the control electrode in the contact area;
- and
- a second conductive structure contacting the shield electrode inside the trench within the contact area and contacting the source region in the active area, wherein the second conductive structure includes a portion that wraps around an end of the first conductive structure.
5 more elements
A semiconductor device structure comprising:
- a region of semiconductor material having a major surface, an active area, and a contact area;
- a trench having a striped shape formed in the region of semiconductor material and extending from the active area to the contact area;
- a source region adjacent the trench in the active area;
- a shield electrode formed in the trench and separated from the region of semiconductor material by a first insulator layer;
- a control electrode formed in the trench and separated from the region of semiconductor material by a second insulator layer and separated from the shield electrode by a third insulator layer, wherein the shield electrode and the control electrode terminate in the contact area, and wherein the shield electrode terminates in the contact area without overlapping the major surface of the region of semiconductor material in the contact area, and wherein the shield electrode is recessed below the major surface of the region of semiconductor material in the contact area, and wherein the first and third insulator layers are thicker than the second insulator layer;
- a first conductive structure contacting the control electrode in the contact area;
- and
- a second conductive structure contacting the shield electrode within the contact area and contacting the source region in the active area.
5 more elements
A semiconductor device structure comprising:
- a region of semiconductor material having a major surface, an active region and a contact region;
- a first trench structure formed in the region of semiconductor material and extending from the active region to the contact region, wherein the first trench structure includes a control electrode layer and a shield electrode layer, and wherein an upper surface of the control electrode layer in the contact region terminates without overlapping the major surface of the region of semiconductor material in the contact region;
- a first conductive layer coupled to the control electrode layer;
- and
- a second conductive layer coupled to the shield electrode layer.
2 more elements
Dependencies are inferred from the claim text.