Vertical type semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Min HWANG, Han-Soo KIM, Woon-Kyung LEE, Won-Seok CHO
Life of this patent
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Abstract
A vertical type semiconductor device includes first and second word line structures that include first and second word lines. The word lines surround a plurality of pillar structures, which are provided to connect the word lines to corresponding string select lines. Connecting patterns electrically connect pairs of adjacent first and second word lines in a same plane. The device may be a nonvolatile memory device or a different type of device.
Claims20
A vertical type semiconductor device, comprising:
- a plurality of pillar structures extending in a first direction, the pillar structures including channel patterns and being arranged in a second direction and a third direction crossing the second direction;
- a first word line structure surrounding the pillar structures, the first word line structure extending in the second direction and including first word lines, the first word lines being spaced apart from each other and stacked in the first direction;
- a second word line structure surrounding the pillar structures, the second word line structure extending in the second direction and including second word lines, the second word lines being spaced apart from each other and stacked in the first direction, the second word line structure being disposed adjacent to the first word line structure in the third direction;
- a plurality of connecting patterns to connect side walls of adjacent first and second word lines, the connecting patterns being electrically coupled with the first and second word lines positioned at a same level;
- and
- a plurality of string select lines coupled to string select transistors on the first and second word line structures, each of the string select lines surrounding at least one pillar structure in the third direction and extending in the second direction, the string select lines separated from the first and second word line structures.
A vertical type semiconductor device, comprising:
- a plurality of pillar structures extending in a first direction, the pillar structures including a channel pattern and being arranged in a second direction and a third direction crossing the second direction;
- a word line pattern including word lines and connecting patterns, the word lines surrounding the pillar structures, extending in the second direction, and being repeatedly arranged in parallel in the third direction, the connecting patterns connecting side walls of the word lines to electrically connect the word lines repeatedly arranged in parallel to each other in the third direction;
- and
- a plurality of string select lines coupled to respective string select transistors, each of the string select lines extending in a second direction and provided higher than an uppermost word line pattern and surrounding one pillar structure in the third direction, the string select lines separated from the word line pattern.
A vertical type semiconductor device, comprising:
- a first word line;
- a second word line;
- a connector to electrically connect the first word line and the second word line to form a word line pattern;
- at least one string select line over the word line pattern;
- and
- a number of pillars to electrically connect the at least one string select line to the first and second word lines of the word line pattern, wherein the connector is substantially coplanar with the first and second word lines.
Dependencies are inferred from the claim text.