Semiconductor device having dual parallel channel structure and method of fabricating the same

A semiconductor device, comprising:

• a substrate including a drift region, the drift region doped to a first conduction type;
• a trench in an upper surface of the substrate;
• a gate arranged along side walls of the trench;
• a gate oxide layer between the side walls of the trench and the gate and between a bottom surface of the trench and the gate;
• a first source region on the upper surface of the substrate, the first source region being of the first conduction type;
• a second source region on the bottom surface of the trench, the second source region being of the first conduction type;
• a first well region between the first source region and the drift region;
• and
• a second well region between the second source region and the drift region, the first and second well regions doped to a second conduction type, the second conduction type being electrically opposite to the first conduction type.