Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorTakayuki SHIMATOU
Life of this patent
Estimating the term…
Loading patent…
AssigneeFuji Electric Co., Ltd.
InventorTakayuki SHIMATOU
Estimating the term…
A semiconductor device includes element active portion X and element peripheral portion Y. An interlayer insulating film is formed on upper surfaces of portions X and Y. A source electrode connected to a p base region and n-type source region and a gate metal wiring formed annularly surrounding the source electrode are formed on element active portion X side upper surface of the interlayer insulating film. The gate metal wiring connects to a gate electrode. An organic protective film with openings is formed on a first main surface side upper surface of the semiconductor substrate, and the openings serve as a gate electrode pad partially exposing the gate metal wiring and a source electrode pad partially exposing the source electrode. An inorganic protective film formed between the gate metal wiring and the organic protective film covers the gate metal wiring. The semiconductor device is highly reliable.
A semiconductor device comprising an element active portion and an element peripheral portion provided in an outer periphery than the element active portion, wherein
Dependencies are inferred from the claim text.