Three-dimensional semiconductor devices with current path selection structure and methods of operating the same

-14. (canceled)

(canceled)

-23. (canceled)

-27. (canceled)

-31. (canceled)

-37. (canceled)

A three-dimensional semiconductor memory device, comprising:

• a common source structure, a string selection structure, and a memory structure on a substrate, the memory structure interposed between the common source structure and the string selection structure,
• wherein the memory structure comprises a plurality of sequentially stacked active patterns elongated parallel to a top surface of the substrate, gate patterns extending perpendicular to the top surface of the substrate, and memory elements interposed between the active patterns and the gate patterns, and
• wherein the string selection structure is configured to select a plurality of the memory elements at a given level relative to the top surface of the substrate, while simultaneously refraining from selecting other memory elements that overlie or underlie the plurality of memory elements at the given level.

The device of claim 39 wherein the string selection structure comprises:

• drain patterns elongated perpendicular to the top surface of the substrate to connect end portions of the active patterns to each other;
• and
• layer-selection patterns sequentially stacked on the substrate.