Methods of forming semiconductor device with self-aligned contact elements and the resulting device

A method, comprising:

• forming a final gate structure in a gate cavity that is laterally defined by sidewall spacers positioned in a first layer of insulating material;
• removing a portion of said sidewall spacers to define recessed sidewall spacers and a spacer cavity having a first depth relative to an upper surface of said first layer of insulating material;
• removing a portion of said final gate structure to define a recessed final gate structure cavity having a second depth relative to said upper surface of said first layer of insulating material that is greater than said first depth;
• and
• forming an etch stop layer on at least said recessed sidewall spacers and said recessed final gate structure, said etch stop layer having a stepped profile when viewed in cross-section.

A transistor device, comprising:

• a final gate structure positioned above a semiconducting substrate, said final gate structure having an upper surface that is positioned at a first height level above a surface of said substrate;
• sidewall spacers positioned adjacent said final gate structure, said sidewall spacers having an upper surface that is positioned at a second height level above said surface of said substrate, wherein said second height level is greater than said first height level;
• an etch stop layer formed on said upper surfaces of said sidewall spacers and said final gate structure;
• a layer of insulating material formed above said substrate and said final gate structure;
• and
• a conductive contact positioned in an opening formed in at least said layer of insulating material, said conductive contact being conductively coupled to a contact region of said transistor.

A transistor device, comprising:

• a final gate structure positioned above a semiconducting substrate, said final gate structure having an upper surface that is positioned at a first height level above a surface of said substrate;
• sidewall spacers positioned adjacent said final gate structure, said sidewall spacers having an upper surface that is positioned at a second height level above said surface of said substrate, wherein said second height level is greater than said first height level;
• an etch stop layer formed on said upper surfaces of said sidewall spacers and said final gate structure, said etch stop layer defining an etch stop cavity having a stepped profile when viewed in cross-section;
• a first layer of insulating material positioned in and filling said etch stop cavity;
• a second layer of insulating material positioned above said substrate, said first layer of insulating material and said final gate structure;
• and
• a conductive contact positioned in an opening formed in at least said second layer of insulating material, said conductive contact being conductively coupled to a contact region of said transistor.

A transistor device, comprising:

• a final gate structure positioned above a semiconducting substrate, said final gate structure having an upper surface that is positioned at a first height level above a surface of said substrate;
• sidewall spacers positioned adjacent said final gate structure, said sidewall spacers having an upper surface that is positioned at a second height level above said surface of said substrate, wherein said second height level is greater than said first height level;
• an etch stop layer formed on said upper surfaces of said sidewall spacers and said final gate structure, said etch stop layer defining an etch stop cavity having a stepped profile when viewed in cross-section;
• first and second layers of insulating materials positioned side by side in said etch stop cavity;
• a third layer of insulating material positioned above said substrate and said final gate structure;
• and
• a conductive contact positioned in an opening formed in at least said third layer of insulating material, said conductive contact being conductively coupled to a contact region of said transistor.