High voltage junction field effect transistor structure
AssigneeMacronix International Co., Ltd.
InventorsWEI-HSUN HSU, SHUO-LUN TU, SHIH-CHIN LIEN, SHYI-YUAN WU
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Abstract
A JFET structure includes a first JFET having a first terminal and a second JFET neighboring with the first JFET. Both JFETs commonly share the first terminal and the first terminal is between the gate of each JFET. The JFET also provides at least one tuning knob to adjust the pinch-off voltage and a tuning knob to adjust the breakdown voltage of the JFET structure. Moreover, the JFET has a buried layer as another tuning knob to adjust the pinch-off voltage of the JFET structure.
Claims23
A JFET structure, comprising:
- a first JFET having a first terminal;
- and
- a second JFET neighboring with the first JFET and commonly sharing the first terminal with the first JFET, wherein the first terminal is between the gate of each JFET.
The JFET structure in claim 4, further comprising a first isolation region between the first terminal and the gate
A JFET structure providing a plurality of pinch-off channels, wherein the JFET structure comprises:
- a substrate of a first conductivity type;
- a first JFET having a first terminal;
- a second JFET in/on the substrate, wherein the first terminal is commonly shared with the second JFET, in which the first terminal is between the first and second JFET;
- and
- a buried layer of a second conductivity type in the substrate, wherein the buried layer is under the first and second JFET.
A method of manufacturing a JFET structure, wherein the method comprises:
- providing a substrate of a first conductivity type;
- forming a first JFET and a second JFET in the substrate, wherein the first and second JFET commonly share a first terminal, in which the first terminal is between the gate of each JFET;
- and
- forming a buried layer of the second conductivity type under the first and second JFET.
Dependencies are inferred from the claim text.