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US 2014/0197464 A1Published application
Cmos image sensor and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorHisanori IHARA
Life of this patent
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Abstract
A CMOS image sensor has a photodiode including first and second impurity layers sequentially formed on a substrate, an isolation layer on the second impurity layer, and a transfer gate structure through the second impurity layer. The transfer gate structure contacts a top surface of the first impurity layer and a portion of the second impurity layer and includes a bottom surface having a step shape.
Claims19
A CMOS image sensor, comprising:
- a photodiode including a first impurity layer and a second impurity layer sequentially formed on a substrate;
- an isolation layer on the second impurity layer;
- and
- a transfer gate structure through the second impurity layer, the transfer gate structure contacting a top surface of the first impurity layer and a portion of the second impurity layer, the transfer gate structure including a bottom surface having a step shape.
1 more element
A method of manufacturing a CMOS image sensor, the method comprising:
- sequentially forming a first impurity layer and second impurity layer on a substrate;
- forming an isolation layer on the second impurity layer;
- and
- forming a transfer gate structure through the second impurity layer, the transfer gate structure contacting a top surface of the first impurity layer and a portion of the second impurity layer, the transfer gate structure including a bottom surface having a step shape.
1 more element
A CMOS image sensor, comprising:
- a first impurity layer;
- a second impurity layer on the first impurity layer, the first impurity layer and the second impurity layer forming a photodiode;
- an isolation layer on the second impurity layer, portions of the second impurity layer and the isolation layer being absent above the first impurity layer such that a portion of the first impurity layer is exposed and such that the second impurity layer includes steps between the exposed first impurity layer and a top surface of the second impurity layer;
- and
- a transfer gate structure extending through the second impurity layer, the transfer gate structure contacting the exposed top surface of the first impurity layer and the steps of the second impurity layer, the transfer gate structure including a bottom surface having a step shape complementary to the steps of the second impurity layer.
2 more elements
Dependencies are inferred from the claim text.