Metal-programmable integrated circuits

Abstract

A metal-programmable integrated circuit may include an array of metal-programmable cells. Each cell may include multi-gate transistor structures in which multiple surfaces of a gate structure serve to control current flow through at least one channel structure. The multi-gate transistor structures may form one or more fin-shaped field effect transistors. The gate structure may at least partially enclose multiple channel structures. Pairs of source-drain structures may be coupled to the channel structures. The transistor structures of each cell may be formed in a substrate covered with one or more metal interconnect layers. Paths formed in the metal interconnect layers may configure the cells to perform desired logic functions. The paths associated with a given cell may be selectively coupled to transistor structures of the cell to configure the cell for a desired logic function and/or for desired output drive strength.

Dependencies are inferred from the claim text.