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US 2014/0197460 A1Published application
Semiconductor device, method for manufacturing the same, power supply device, and high-frequency amplifier
AssigneeFujitsu Limited
InventorKozo Makiyama
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Abstract
A semiconductor device includes: a compound semiconductor stack structure including a plurality of compound semiconductor layers stacked over a semiconductor substrate; and a first insulating film covering the surface of the compound semiconductor stack structure, the first insulating film being a silicon nitride film including, on the top side, a first region containing nitrogen element in excess of the stoichiometric ratio.
Claims14
A semiconductor device comprising:
- a compound semiconductor stack structure including a plurality of compound semiconductor layers stacked over a semiconductor substrate;
- and
- a first insulating film covering the surface of the compound semiconductor stack structure, the first insulating film being a silicon nitride film including, on the top side, a first region containing nitrogen element in excess of the stoichiometric ratio.
A method for manufacturing semiconductor devices, comprising:
- forming a compound semiconductor stack structure by stacking a plurality of compound semiconductor layers over a semiconductor substrate;
- and
- forming a first insulating film to cover the surface of the compound semiconductor stack structure, the first insulating film being a silicon nitride film including, on the top side, a first region containing nitrogen element in excess of the stoichiometric ratio.
A power supply device comprising:
- a transformer;
- and
- a high-voltage circuit and a low-voltage circuit disposed with the transformer interposed therebetween, the high-voltage circuit comprising a transistor, the transistor including:
- a compound semiconductor stack structure including a plurality of compound semiconductor layers stacked over a semiconductor substrate, and
- a first insulating film covering the surface of the compound semiconductor stack structure, the first insulating film being a silicon nitride film including, on the top side, a first region containing nitrogen element in excess of the stoichiometric ratio.
2 more elements
A high-frequency amplifier comprising:
- an amplifier configured to amplify an input signal, the amplifier comprising a transistor, the transistor including:
- a compound semiconductor stack structure including a plurality of compound semiconductor layers stacked on a semiconductor substrate, and
- a first insulating film covering the surface of the compound semiconductor stack structure, the first insulating film being a silicon nitride film including, on the top side, a first region containing nitrogen element in excess of the stoichiometric ratio.
Dependencies are inferred from the claim text.