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US 2014/0197459 A1Published application
Semiconductor device
AssigneeEcole Polytechnique Federale De Lausanne (Epfl)
InventorsAndras Kis, Branimir Radisavljevic
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Abstract
Semiconductor device comprising a source electrode, a drain electrode and a semiconducting layer consisting of a single or double 2-dimensional layer(s) made from one of the following materials: MoS2, MoSe2, WS2, WSe2, MoTe2 or WTe2.
Claims15
Semiconductor device comprising a source electrode, a drain electrode and a semiconducting layer consisting of a single or double 2-dimensional layer(s) made from one of the following materials:
- MoS2, MoSe2, WS2, WSe2, MoTe2 or WTe2.
Dependencies are inferred from the claim text.