Semiconductor substructure having elevated strain material-sidewall interface and method of making the same

A method for forming a semiconductor substructure, said method comprising:

• providing a semiconductor substrate;
• forming a gate structure over said crystalline silicon material;
• forming a spacer along a sidewall of said gate structure;
• creating an recess extending into said semiconductor substrate, adjacent said gate structure;
• and
• filling said recess with a strain material, said strain material forming an interface with said spacer, wherein said interface is above an upper surface of said semiconductor substrate.

A method for forming a semiconductor substructure, said method comprising:

• providing a semiconductor substrate;
• forming a gate structure over said crystalline silicon material;
• forming an insertion layer on said semiconductor substrate;
• forming a spacer along a sidewall of said gate structure, wherein said spacer is formed over said insertion layer;
• creating at least one recess adjacent said gate structure, said recesses extending into said semiconductor substrate and extending under said spacer;
• removing a portion of said insertion layer under said spacer prior to said filing step;
• and
• filling said at least recess with a strain material, said strain material forming an interface with said spacer, wherein said interface is at least 2 nm above an upper surface of said semiconductor substrate.