Optoelectronic Semiconductor Chip

An optoelectronic semiconductor chip comprising:

• a semiconductor body of semiconductor material comprising a p-side, an n-side and an active layer between the p-side and the n-side, the active layer configured to generate radiation during operation;
• a p-contact layer electrically contacting the p-side of the semiconductor body;
• and
• an n-contact layer electrical contacting the n-side of the semiconductor body, wherein the n-contact layer contains a transparent conductive oxide (TCO) layer and a minor layer, the TCO layer being arranged between the n-side of the semiconductor body and the minor layer.

An optoelectronic semiconductor chip comprising:

• a semiconductor body of semiconductor material;
• a p-contact layer;
• and
• an n-contact layer;
• wherein the semiconductor body comprises an active layer for generating radiation during operation;
• wherein the semiconductor body comprises a p-side and an n-side, the active layer being arranged between the p-side and the n-side;
• wherein the p-contact layer electrically contacts the p-side of the semiconductor body;
• wherein the n-contact layer electrically contacts the n-side of the semiconductor body;
• wherein the n-contact layer contains a TCO layer and a minor layer, wherein the TCO layer is arranged between the n-side of the semiconductor body and the mirror layer;
• wherein the mirror layer contains silver;
• wherein the n-contact layer passes through the p-side by means of a hole and ends in the n-side of the semiconductor body;
• and
• wherein the TCO layer is arranged in the hole between the n-side of the semiconductor body and the mirror layer.