Method of forming step doping channel profile for super steep retrograde well field effect transistor and resulting device

A device comprising:

• a doped silicon substrate;
• shallow trench isolation (STI) regions in the silicon substrate;
• and
• carbon-doped silicon (Si:C) formed in a recess formed between STI regions.

A method comprising:

• providing shallow trench isolation (STI) regions in a silicon wafer;
• performing a deep well implantation of a p-type dopant into the silicon wafer between the STI regions;
• recessing the silicon wafer to a depth of 10 nanometers (nm) to 25 nm between the STI regions;
• implanting a p-type dopant into the silicon wafer between the STI regions at an energy of 5 kiloelectronvolts (keV) to 30 keV and at a dose of 2E13 to 1E14;
• forming carbon-doped silicon (Si:C) on the doped silicon between the STI regions by:
• epitaxially growing Si:C or
• epitaxially growing undoped silicon, implanting germanium (Ge) in the undoped silicon, implanting carbon in the Ge doped silicon, and performing a spike rapid thermal anneal (RTA);
• and
• epitaxially growing undoped silicon on the Si:C to a thickness of 0 nm to 15 nm.