Rfid tags based on self-assembly nanoparticles

Abstract

A semiconductor device comprising a gate electrode; an insulating layer in electrical connection with the gate electrode; a source electrode and a drain electrode; and a semiconducting channel layer configured to selectively allow electrically connection between the source electrode and the drain electrode based on the voltage on the gate electrode; wherein the semiconducting channel layer comprises metal nanoparticles; and the semiconducting channel layer is in contact with the source electrode, the drain electrode and the insulating layer. A method of manufacturing the semiconductor device of the present invention is also disclosed.

Dependencies are inferred from the claim text.