Thin-Film Transistor Active Device

A thin-film transistor (TFT) active device, comprising:

• a gate electrode;
• a gate insulation layer covering the gate electrode;
• an oxide semiconductor layer formed on the gate insulation layer;
• a first protection layer formed on the oxide semiconductor layer;
• a source/drain electrode electrically connected with the oxide semiconductor layer;
• and
• a second protection layer covering the source/drain electrode;
• wherein at least one of the gate insulation layer, the first protection layer, and the second protection layer is made of a nitride of silicon and has a refractive index between 2.0-3.0;
• wherein the oxide semiconductor layer comprises at least one of an oxide of Zn, an oxide of Sn, an oxide of In, and an oxide of Ga;
• wherein the source/drain electrode comprises Cu or Al;
• wherein the first protection layer is arranged between the oxide semiconductor layer and the source/drain electrode;
• wherein the nitride of silicon is formed by applying plasma enhanced chemical vapor deposition to a mixed gas having a flow ratio of N2/(N2+SiH4) between 0.7-0.9;
• wherein the nitride of silicon has hydrogen content less than 5 atom %;
• wherein the first protection layer is an etch stop layer;
• wherein the second protection layer is a passivation layer;
• wherein the oxide semiconductor layer is an IGZO layer;
• and
• wherein the TFT active device is a thin-film transistor of TFT-LCD (Liquid Crystal Display).

A thin-film transistor (TFT) active device, comprising:

• a gate electrode;
• a gate insulation layer covering the gate electrode;
• an oxide semiconductor layer formed on the gate insulation layer;
• a source/drain electrode electrically connected with the oxide semiconductor layer;
• and
• a protection layer covering the source/drain electrode;
• wherein at least one of the gate insulation layer and the protection layer is made of a nitride of silicon and has a refractive index between 2.0-3.0.